管式LPCVD设备

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管式LPCVD设备

TOPCon电池隧穿氧化层、i-poly、D-poly低压化学气相沉积。

设备名称 Equipment Name

管式LPCVD设备  Horizontal LPCVD


设备型号 Equipment Model

LD-420/LD-420L/LD-420MAX


设备用途 Equipment Application

TOPCon电池隧穿氧化层、i-poly、D-poly低压化学气相沉积。

Deposition of tunnel oxide layer, i-Poly and D-poly for TOPCon solar cells.

 

技术特点  Features

1、低压与热壁工艺特性,成膜均匀性、致密性好。

Low pressure and hot wall process characteristics, with better film uniformity and good compactness.

2、LPCVD工艺特性,基片密排对成膜速率影响小,单管装片量大。
LPCVD process, densely loaded substrates have little effect on the coating rate, with large loading capacity in single tube.

3、更多温区设置,可靠保证片间均匀性。
More temperature zones to ensure the uniformity between wafers reliably.

4、独立调节分段进气,弥补气流耗尽效应。
Independently adjustable segmented air inlet to compensate for the airflow depletion effect.

 

设备参数  Parameters